View NE5550979A-T1A-A_7104274.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

r09ds0031ej0300 rev.3.00 page 1 of 11 mar 12, 2013 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. data sheet ne5550979a silicon power ldmos fet features ? high output power : p out = 39.5 dbm typ. (v ds = 7.5 v, i dset = 200 ma, f = 460 mhz, p in = 25 dbm) ? high power added efficiency : add = 66% typ. (v ds = 7.5 v, i dset = 200 ma, f = 460 mhz, p in = 25 dbm) ? high linear gain : g l = 22 db typ. (v ds = 7.5 v, i dset = 200 ma, f = 460 mhz, p in = 10 dbm) ? high esd tolerance : esd tolerance > 8 kv (iec61000-4-2, contact discharge) ? suitable for vhf to uhf-band class-ab power amplifier. applications ? 150 mhz band radio system ? 460 mhz band radio system ? 900 mhz band radio system ordering information part number order number package marking supplying form ne5550979a ne5550979a-a 79a (pb free) w6 ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ne5550979a-t1 ne5550979a-t1-a ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ? qty 1 kpcs/reel ne5550979a-t1a NE5550979A-T1A-A ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ? qty 5 kpcs/reel remark to order evaluation samples, please contact your nearby sales office. part number for sample order: ne5550979a absolute maximum ratings (t a = 25 c, unless otherwise specified) operation in excess of any one of these parameters may result in permanent damage. parameter symbol ratings unit drain to source voltage v ds 30 v gate to source voltage v gs 6.0 v drain current i ds 3.0 a total power dissipation note p tot 25 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c note: value at t c = 25 c caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0031ej0300 rev.3.00 mar 12, 2013
ne5550979a r09ds0031ej0300 rev.3.00 page 2 of 11 mar 12, 2013 recommended operating range (t a = 25 c) parameter symbol test conditions min. typ. max. unit drain to source voltage v ds ? 7.5 9.0 v gate to source voltage v gs 1.65 2.20 2.85 v drain current i ds ? 1.7 ? a input power p in f = 460 mhz, v ds = 7.5 v ? 25 30 dbm electrical characteristics (t a = 25 c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit dc characteristics gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 a gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 1.15 1.65 2.25 v drain to source breakdown voltage bv dss i ds = 10 a 25 37 ? v transconductance g m v ds = 7.5 v, i ds = 700 100 ma 1.8 2.2 2.9 s thermal resistance r th channel to case ? 5.0 ? c/w rf characteristics output power p out f = 460 mhz, v ds = 7.5 v, 38.5 39.5 ? dbm drain current i ds p in = 25 dbm, ? 1.70 ? a power drain efficiency d i dset = 200 ma (rf off) ? 68 ? % power added efficiency add ? 66 ? % linear gain g l note 1 ? 22.0 ? db output power p out f = 157 mhz, v ds = 7.5 v, ? 39.6 ? dbm drain current i ds p in = 23 dbm, ? 1.60 ? a power drain efficiency d i dset = 200 ma (rf off) ? 75 ? % power added efficiency add ? 73 ? % linear gain g l note 2 ? 25.0 ? db output power p out f = 900 mhz, v ds = 7.5 v, ? 38.6 ? dbm drain current i ds p in = 27 dbm, ? 1.76 ? a power drain efficiency d i dset = 200 ma (rf off) ? 55 ? % power added efficiency add ? 52 ? % linear gain g l note 1 ? 16.0 ? db note 1 : p in = 10 dbm note 2 : p in = 5 dbm remark dc performance is 100% testing. rf performanc e is testing several samples per wafer. wafer rejection criteria for standard dev ices is 1 reject for several samples.
ne5550979a r09ds0031ej0300 rev.3.00 page 3 of 11 mar 12, 2013 test circuit schematic for 460 mhz c20 c10 in out c22 c11 c12 c21 c1 v ds c1 l1 r1 v gs fet ne5550979a (ws) 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31cr72a105ka01b murata c10 100 pf grm1882c1h101ja01 murata c11 24 pf atc100a240jw american technical ceramics c12 2.4 pf atc100a2r4bw american technical ceramics c20 27 pf atc100a270jw american technical ceramics c21 1.8 pf atc100a1r8bw american technical ceramics c22 100 pf atc100a101jw american technical ceramics r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka component layout of t est circuit for 460 mhz c11 c10 c12 c1 r1 l1 c1 c20 c21 c22 v gs gnd v ds c11 c10 c12 c1 r1 l1 c1 c20 c21 c22 v gs gnd v ds
ne5550979a r09ds0031ej0300 rev.3.00 page 4 of 11 mar 12, 2013 typical characteristics 1 (t a = 25 c) r: f = 460mhz, v ds = 3.6/4.5/6/7.5/8.4/9 v, i dset = 200 ma, p in = 0 to 32 dbm im: f1 = 460mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/8.4/9 v, i dset = 200ma, p out (2 tone) = 12 to 38 dbm add - 3.6 v add - 6.0 v add - 4.5 v add - 9 v add - 7.5 v 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) im 3 /im 5 vs. 2 tones output power 2nd harmonics 2f 0 (dbc) 3rd harmonics 3f 0 (dbc) output power p out (dbm) 2f 0 , 3f 0 vs. output power p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 50 5.0 45 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 35 30 20 15 10 ? 5 05 25 power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v 00 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 35 30 20 15 10 ? 5 05 25 2f 0 - 3.6 v 2f 0 - 4.5 v 2f 0 - 6.0 v 2f 0 - 7.5 v 3f 0 - 3.6 v 3f 0 - 4.5 v 3f 0 - 7.5 v 3f 0 - 6.0 v 3f 0 - 9 v 2f 0 - 9 v ? 70 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 45 35 30 25 10 15 20 40 im 3 - 3.6 v im 3 - 4.5 v im 3 - 6 v im 3 - 7.5 v im 5 - 3.6 v im 5 - 4.5 v im 5 - 7.5 v im 5 - 6.0 v im 5 - 9 v im 3 - 9 v ? 70 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 40 35 30 25 10 15 20 remark the graphs indicate nominal characteristics.
ne5550979a r09ds0031ej0300 rev.3.00 page 5 of 11 mar 12, 2013 test circuit schematic for 157 mhz c10 in out c24 c11 c12 c21 c22 c23 c20 c1 v ds c1 l1 l11 l20 r1 v gs fet ne5550979a 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31cr72a105ka01b murata c10 100 pf grm1882c1h101ja01 murata c11 4.7 pf atc100a4r7ct american technical ceramics c12 39 pf atc100a390jt american technical ceramics c20 2.0 pf atc100a2r0ct american technical ceramics c21 22 pf atc100a220jt american technical ceramics c22 68 pf atc100a680jt american technical ceramics c23 12 pf atc100a120jt american technical ceramics c24 100 pf atc100a101jt american technical ceramics r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou l11 27 nh llq2012-f27n toko l20 35 nh 0.5 mm, d = 2.4 mm, 5 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka
ne5550979a r09ds0031ej0300 rev.3.00 page 6 of 11 mar 12, 2013 component layout of t est circuit for 157 mhz typical characteristics 2 (t a = 25 c) r: f = 157 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 200 ma, p in = 0 to 27 dbm add - 3.6 v add - 6 v add - 4.5 v add - 9 v add - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 45 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 30 20 15 10 ? 5 05 25 power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v 00 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 i ds - 3.6 v i ds - 6 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v 30 20 15 10 ? 5 05 25 c23 c11 c10 c12 c1 r1 l1 c1 c20 c22 l11 c21 l20 c24 v gs v ds gnd
ne5550979a r09ds0031ej0300 rev.3.00 page 7 of 11 mar 12, 2013 test circuit schematic for 900 mhz c10 in out c23 c11 c21 c22 c20 c1 v ds c1 l1 r1 v gs fet ne5550979a 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31cr72a105ka01b murata c10 100 pf grm1882c1h101ja01 murata c11 15 pf atc100a150jw american technical ceramics c20 3.3 pf atc100a3r3bw american technical ceramics c21 3.3 pf atc100a3r3bw american technical ceramics c22 12 pf atc100a120jt american technical ceramics c23 100 pf atc100a101jt american technical ceramics r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka
ne5550979a r09ds0031ej0300 rev.3.00 page 8 of 11 mar 12, 2013 component layout of t est circuit for 900 mhz typical characteristics 3 (t a = 25 c) rf: f = 900 mhz v ds = 3.6/4.5/6/7.5/9 v, i dset = 200 ma, p in = 0 to 32 dbm add - 6.0 v add - 4.5 v add - 7.5 v add - 9 v add - 3.6 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 50 5.0 45 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 35 30 20 15 10 ? 5 05 25 power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v 00 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 35 30 20 15 10 ? 5 05 25 remark the graphs indicate nominal characteristics. c11 c10 c1 r1 l1 c1 c20 c22 v gs v ds c21 c23
ne5550979a r09ds0031ej0300 rev.3.00 page 9 of 11 mar 12, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/
ne5550979a r09ds0031ej0300 rev.3.00 page 10 of 11 mar 12, 2013 package dimensions 79a (unit: mm) 0.90.2 0.20.1 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain w 6 21001 79a package recommended p.c.b. layout (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin o r something to avoid solder flow .
ne5550979a r09ds0031ej0300 rev.3.00 page 11 of 11 mar 12, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne5550979a data sheet description rev. date page summary 1.00 nov 25, 2011 ? first edition issued 2.00 jul 04, 2012 p.1 modificati on of ordering information p.5 addition of test circuit schematic for 157 mhz p.6 addition of component la yout of test circuit for 157 mhz p.7 addition of test circuit schematic for 900 mhz p.8 addition of component la yout of test circuit for 900 mhz p.9 modification of s-parameters 3.00 mar 12, 2013 p3 modification of components of test circuit for measuring electrical characteristics p5 modification of test circuit schematic for 157 mhz modification of components of test circuit for measuring electrical characteristics p7 modification of components of test circuit for measuring electrical characteristics
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . california eastern laboratories , inc. 4590 patrick henr y drive, santa clara, california 95054, u.s.a . tel: +1-408-919-2500, fax: +1-408-988-0279 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2013 renesas electronics corporation. all rig hts reserved. [colophon 2.2 ]

▲Up To Search▲

Price & Availability of NE5550979A-T1A-A

	To Download NE5550979A-T1A-A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .